QD laser on InP substrate for 1.55 μm emission and beyond
Identifieur interne : 003A36 ( Main/Repository ); précédent : 003A35; suivant : 003A37QD laser on InP substrate for 1.55 μm emission and beyond
Auteurs : RBID : Pascal:10-0427073Descripteurs français
- Pascal (Inist)
- Courant seuil, Laser semiconducteur, Fil quantique, Laser puits quantique, Laser point quantique, Température ambiante, Densité courant, Nanostructure, Puits quantique, Point quantique, Composé binaire, Indium Arséniure, Semiconducteur III-V, Indium Phosphure, Détecteur quantique, Substrat InP, InAs, Substrat GaAs, GaAs, As In, In P, As Ga, InP, 0130C, 0707D, 4255P.
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Abstract
InAs nanostructures formed on InP substrates allow the realization of devices working in telecommunication wavelength range between 1.4 and 1.65 μm. However due to the low lattice mismatch existing between InAs and InP, the self assembling process in InP is more complex than on GaAs substrates. First high density quantum wires obtained on InP(001) have been integrated in laser. Lasers emitting at room temperature have been achieved. For an infinite length cavity, a threshold current density per QD plane as low as 45 A/cm2 is deduced. This result compares favourably with those obtained on quantum wells lasers. However, the stability of the threshold current with temperature, predicted for quantum dots laser is not observed. Thus, growth on non standard substrates such as miscut substrates or high index substrates have been investigated in order to achieve QDs on InP. On (113) B substrates, quantum dots in high density and with size comparable with those achieved on GaAs(001) have been obtained. Lasers with record threshold current have been obtained. However the modulation properties of the laser are not as good as predicted for ideal quantum dots lasers. Finally we present the attempts to extend the QD emission wavelength in the 2-3 μm region.
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Le Corre</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON, INSA, Université Européenne de Bretagne Avenue des buttes de Coesmes</s1><s2>35043</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region></placeName></affiliation></author><author><name sortKey="Piron, R" uniqKey="Piron R">R. Piron</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON, INSA, Université Européenne de Bretagne Avenue des buttes de Coesmes</s1><s2>35043</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region></placeName></affiliation></author><author><name sortKey="Grillot, F" uniqKey="Grillot F">F. Grillot</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON, INSA, Université Européenne de Bretagne Avenue des buttes de Coesmes</s1><s2>35043</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region></placeName></affiliation></author><author><name sortKey="Lu, W" uniqKey="Lu W">W. Lu</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON, INSA, Université Européenne de Bretagne Avenue des buttes de Coesmes</s1><s2>35043</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region></placeName></affiliation></author><author><name sortKey="Even, J" uniqKey="Even J">J. Even</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON, INSA, Université Européenne de Bretagne Avenue des buttes de Coesmes</s1><s2>35043</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region></placeName></affiliation></author><author><name sortKey="Elias, G" uniqKey="Elias G">G. Elias</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON, INSA, Université Européenne de Bretagne Avenue des buttes de Coesmes</s1><s2>35043</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region></placeName></affiliation></author><author><name sortKey="Levallois, C" uniqKey="Levallois C">C. Levallois</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON, INSA, Université Européenne de Bretagne Avenue des buttes de Coesmes</s1><s2>35043</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region></placeName></affiliation></author><author><name sortKey="Loualiche, S" uniqKey="Loualiche S">S. Loualiche</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>FOTON, INSA, Université Européenne de Bretagne Avenue des buttes de Coesmes</s1><s2>35043</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Région Bretagne</region></placeName></affiliation></author><author><name sortKey="Bozkurt, M" uniqKey="Bozkurt M">M. Bozkurt</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>EiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513</s1><s2>5600MB Eindhoven</s2><s3>NLD</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>5600MB Eindhoven</wicri:noRegion></affiliation></author><author><name sortKey="Ulloa, J" uniqKey="Ulloa J">J. Ulloa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>EiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513</s1><s2>5600MB Eindhoven</s2><s3>NLD</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>5600MB Eindhoven</wicri:noRegion></affiliation></author><author><name sortKey="Koenraad, P" uniqKey="Koenraad P">P. Koenraad</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>EiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513</s1><s2>5600MB Eindhoven</s2><s3>NLD</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>5600MB Eindhoven</wicri:noRegion></affiliation></author><author><name sortKey="Ponchet, A" uniqKey="Ponchet A">A. Ponchet</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>CEMES-Toulouse, 29, rue Jeanne Marvig, BP 9434731055</s1><s2>Toulouse</s2><s3>FRA</s3><sZ>16 aut.</sZ></inist:fA14><country>France</country><placeName><region type="région">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0427073</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0427073 INIST</idno><idno type="RBID">Pascal:10-0427073</idno><idno type="wicri:Area/Main/Corpus">003D99</idno><idno type="wicri:Area/Main/Repository">003A36</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term><term>Binary compounds</term><term>Current density</term><term>III-V semiconductors</term><term>Indium Arsenides</term><term>Indium Phosphides</term><term>Nanostructures</term><term>Quantum detector</term><term>Quantum dot lasers</term><term>Quantum dots</term><term>Quantum well lasers</term><term>Quantum wells</term><term>Quantum wires</term><term>Semiconductor lasers</term><term>Threshold current</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Courant seuil</term><term>Laser semiconducteur</term><term>Fil quantique</term><term>Laser puits quantique</term><term>Laser point quantique</term><term>Température ambiante</term><term>Densité courant</term><term>Nanostructure</term><term>Puits quantique</term><term>Point quantique</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Semiconducteur III-V</term><term>Indium Phosphure</term><term>Détecteur quantique</term><term>Substrat InP</term><term>InAs</term><term>Substrat GaAs</term><term>GaAs</term><term>As In</term><term>In P</term><term>As Ga</term><term>InP</term><term>0130C</term><term>0707D</term><term>4255P</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">InAs nanostructures formed on InP substrates allow the realization of devices working in telecommunication wavelength range between 1.4 and 1.65 μm. However due to the low lattice mismatch existing between InAs and InP, the self assembling process in InP is more complex than on GaAs substrates. First high density quantum wires obtained on InP(001) have been integrated in laser. Lasers emitting at room temperature have been achieved. For an infinite length cavity, a threshold current density per QD plane as low as 45 A/cm<sup>2</sup> is deduced. This result compares favourably with those obtained on quantum wells lasers. However, the stability of the threshold current with temperature, predicted for quantum dots laser is not observed. Thus, growth on non standard substrates such as miscut substrates or high index substrates have been investigated in order to achieve QDs on InP. On (113) B substrates, quantum dots in high density and with size comparable with those achieved on GaAs(001) have been obtained. Lasers with record threshold current have been obtained. However the modulation properties of the laser are not as good as predicted for ideal quantum dots lasers. Finally we present the attempts to extend the QD emission wavelength in the 2-3 μm region.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7608</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>QD laser on InP substrate for 1.55 μm emission and beyond</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Quantum sensing and nanophotonic devices VII : 24-28 January 2010, San Francisco, California, United States</s1></fA09><fA11 i1="01" i2="1"><s1>BERTRU (N.)</s1></fA11><fA11 i1="02" i2="1"><s1>PARANTHOEN (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>DEHAESE (O.)</s1></fA11><fA11 i1="04" i2="1"><s1>FOLLIOT (H.)</s1></fA11><fA11 i1="05" i2="1"><s1>LE CORRE (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>PIRON (R.)</s1></fA11><fA11 i1="07" i2="1"><s1>GRILLOT (F.)</s1></fA11><fA11 i1="08" i2="1"><s1>LU (W.)</s1></fA11><fA11 i1="09" i2="1"><s1>EVEN (J.)</s1></fA11><fA11 i1="10" i2="1"><s1>ELIAS (G.)</s1></fA11><fA11 i1="11" i2="1"><s1>LEVALLOIS (C.)</s1></fA11><fA11 i1="12" i2="1"><s1>LOUALICHE (S.)</s1></fA11><fA11 i1="13" i2="1"><s1>BOZKURT (M.)</s1></fA11><fA11 i1="14" i2="1"><s1>ULLOA (J.)</s1></fA11><fA11 i1="15" i2="1"><s1>KOENRAAD (P.)</s1></fA11><fA11 i1="16" i2="1"><s1>PONCHET (A.)</s1></fA11><fA12 i1="01" i2="1"><s1>RAZEGHI (M.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SUDHARSANAN (Rengarajan)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>BROWN (Gail J.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>FOTON, INSA, Université Européenne de Bretagne Avenue des buttes de Coesmes</s1><s2>35043</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></fA14><fA14 i1="02"><s1>EiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513</s1><s2>5600MB Eindhoven</s2><s3>NLD</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></fA14><fA14 i1="03"><s1>CEMES-Toulouse, 29, rue Jeanne Marvig, BP 9434731055</s1><s2>Toulouse</s2><s3>FRA</s3><sZ>16 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>76081B.1-76081B.14</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>978-0-8194-8004-0</s0></fA26><fA26 i1="02"><s0>0-8194-8004-5</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174690820410</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>42 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0427073</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>InAs nanostructures formed on InP substrates allow the realization of devices working in telecommunication wavelength range between 1.4 and 1.65 μm. However due to the low lattice mismatch existing between InAs and InP, the self assembling process in InP is more complex than on GaAs substrates. First high density quantum wires obtained on InP(001) have been integrated in laser. Lasers emitting at room temperature have been achieved. For an infinite length cavity, a threshold current density per QD plane as low as 45 A/cm<sup>2</sup> is deduced. This result compares favourably with those obtained on quantum wells lasers. However, the stability of the threshold current with temperature, predicted for quantum dots laser is not observed. Thus, growth on non standard substrates such as miscut substrates or high index substrates have been investigated in order to achieve QDs on InP. On (113) B substrates, quantum dots in high density and with size comparable with those achieved on GaAs(001) have been obtained. Lasers with record threshold current have been obtained. However the modulation properties of the laser are not as good as predicted for ideal quantum dots lasers. Finally we present the attempts to extend the QD emission wavelength in the 2-3 μm region.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00A30C</s0></fC02><fC02 i1="02" i2="3"><s0>001B00G07D</s0></fC02><fC02 i1="03" i2="3"><s0>001B40B55P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Courant seuil</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Threshold current</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>09</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>09</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Fil quantique</s0><s5>11</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Quantum wires</s0><s5>11</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Laser puits quantique</s0><s5>12</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Quantum well lasers</s0><s5>12</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Laser point quantique</s0><s5>13</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Quantum dot lasers</s0><s5>13</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Température ambiante</s0><s5>41</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Ambient temperature</s0><s5>41</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Densité courant</s0><s5>42</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Current density</s0><s5>42</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Nanostructure</s0><s5>47</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Nanostructures</s0><s5>47</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Puits quantique</s0><s5>48</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Quantum wells</s0><s5>48</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Point quantique</s0><s5>49</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Quantum dots</s0><s5>49</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>52</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>52</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Indium Phosphure</s0><s2>NC</s2><s2>NA</s2><s5>53</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium Phosphides</s0><s2>NC</s2><s2>NA</s2><s5>53</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Détecteur quantique</s0><s5>61</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Quantum detector</s0><s5>61</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Detector cuántico</s0><s5>61</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Substrat InP</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Substrat GaAs</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>74</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>77</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>0130C</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>0707D</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>4255P</s0><s4>INC</s4><s5>91</s5></fC03><fN21><s1>277</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Quantum sensing and nanophotonic devices</s1><s2>07</s2><s3>San Francisco CA USA</s3><s4>2010</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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